Sulfur Dioxide Sensor Based on a pH-Sensitive Field Effect Transistor

Authors

  • Benilda S. Ebarvia Industrial Technology Development Institute, DOST Compound, Bicutan, Taguig
  • Rafael L. Alfonso Reserach Center for the Natural Sciences, University of Santo Tomas, España, Manila
  • Fortunato Sevilla III Reserach Center for the Natural Sciences, University of Santo Tomas, España, Manila

DOI:

https://doi.org/10.26534/kimika.v13i2.77-83

Keywords:

sulfur dioxide sensor, pH-sensitive FET sensor, hydrogel, chemical sensor

Abstract

A pH-sensitive field effect transistor (FET) sensor for sulfur dioxide was developed by coating the gate surface of the FET with a thin film of hydrogel containing a hydrogen sulfite electrolyte. Sulfur dioxide generated from a pH 4 potassium hydrogen phthalate buffer solution, diffused through a Teflon membrane covering the hydrogel film and produced a pH change that is monitored by the pH-FET. The sensor exhibited a response time of 2-3 minutes and a very good linearity (r = 0.9948) in the range of 2.4 x 10^7 to 2.25 x 10^4 M. Its sensitivity was 23m V per decade of sulfur dioxide concentration. The response of the sensor was affected by factors such as the hydrogel concentration, the electrolyte concentration and the pH of the carrier solution.

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How to Cite

Ebarvia, B. S., Alfonso, R. L., & Sevilla III, F. (1997). Sulfur Dioxide Sensor Based on a pH-Sensitive Field Effect Transistor. KIMIKA, 13(2), 77–83. https://doi.org/10.26534/kimika.v13i2.77-83

Issue

Vol. 13 No. 2 (1997)

Section

Research Articles

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